An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-Plug (RVP) storage cell structure. This phase-change resistor is formed after CMOS logic fabrication. PCRAM can be embedded without changing any logic device and process. The memory cell selector is implemented by a standard 1.2-V nMOS device. The currents of the set and reset operations are 0.4 and 2.2 mA, respectively. The best endurance is over 10
¹⁰
cycles.