Thermal stress and deformation depend on thickness of CCD composite dielectrics

Thermal stress and deformation depended on CCD Si
3
N
4
/SiO
2
/Si composite dielectrics thickness was simulated by ANSYS. The simulation results were indicated that the thermal stress of each dielectric film was constant and did not depend on the dielectrics thickness, and the deformation distribution was ring from vertical view, and the extremal deformation was located in the structure center whatever composite dielectrics thickness was, and the deformation approximately linearly increased with the dielectrics thickness, and the Si
3
N
4
effect on the deformation was greater than SiO
2
. The effect was also analysed in the experiment. How to select appropriate dielectrics thickness was discussed from the thermal stress and deformation effects on CCD composite dielectrics structure performances and follow-up technology process.