Multi-layer sidewall WOX resistive memory suitable for 3D ReRAM

An easy to fabricate, low-cost, multi-layer sidewall WO
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ReRAM device is proposed for 3D ReRAM application. A 2-layer (10nm × 100nm) device is fabricated and characterized for the first time. The WOX is grown by conventional RTO process but a special semi-permeable TiN (SP-TiN) is developed to achieve the necessary extrusion-free structure for 3D ReRAM. The multi-layer sidewall WO
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ReRAM devices show characteristics similar to planar devices, but the reasons for layer-to-layer variation and some performance degradation still need to be understood.