Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD

We present for the first time Tunnel FETs obtained with a FDSOI CMOS process flow featuring High-K Metal Gate, ultrathin body compressively strained Si
_1-x
Ge
_x
(x from 0 to 30%) based channels, and Si
_0.7
Ge
_0.3
Raised SD. We analyse the tunnelling improvements due to the different technological injection boosters: ultrathin body & EOT, strain, low band gap source, and low temperature SD anneal. For the first time, TFETs with large ON current (up to 428μA/μm) are demonstrated (with >;x1000 I
_ON
gain vs. SOI).