Characterization and modeling of the junction diode for accurate RF model in the 36nm MOSFET

Different CV curves of junction diode were observed in the MOSFET with 36nm MOS for the fist time. Traditional characterization results of source/body and drain /body junction diode from longer channel MOSFET and large diode are not the same as those in the shorter channel and small diode. In this paper we discussed the discrepancies of traditional diode characterization and proposed a new way for short change MOS with 36 nm gate length by S-parameters.