Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks

For the first time, a new decoupling method of PBTI component from hot-carrier (HC) stress is proposed. It is found that the HC degradation is contributed from both PBTI and intrinsic HC component. Using the power-law time exponent of Vt shift in PBTI and HC, the intrinsic HC degradation can be extracted. In addition, a physical model for HC degradation in high-k/metal gate (HK/MG) device has been suggested.