High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications

We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (R
_on,sp
) of 4 mΩ-cm
²
and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.