A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer

Magnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability, high reliability and non-volatility. A macro-model of MTJ with precessional switching is presented in this paper. This model is based on Spin-Transfer Torque (STT) writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL).