Gas sensors on Ga2O3-In2O3 thin films

Ga
₂
O
₃
-In
₂
O
₃
thin films prepared by the magnetron sputtering from the Ga-In eutectic target and the subsequent thermal oxidation were considered. The effect of thermal oxidation conditions on the properties of the Ga
₂
O
₃
-In
₂
O
₃
thin films was investigated. The temperature dependence of conductance of the Ga
₂
O
₃
-In
₂
O
₃
thin films was studied at the range of 20-500°C. The effect of concentration of some gases (ethanol, acetone, and ammonia) on the resistance of the gas sensors made of Ga
₂
O
₃
-In
₂
O
₃
thin films was investigated.