High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation

In this study, the suppression of phosphorus segregation by low temperature (525°C) cap layer growth results in high breakdown voltage of Schottky gates on modulation-doped Si/SiGe heterostructures. The wide window to deplete two-dimensional electron gas (2DEGs) via negative bias with very low leakage thus enables Schottky split gate quantum devices.