Terahertz Imaging Using Strained-Si MODFETs as Sensors

Development of new terahertz (THz) sensors is increasing in interest due to their potential for THz imaging and spectroscopy. One alternative to develop direct THz sensors is based in the oscillation of the plasma waves in the channel of sub-micron FETs.The n-channel Si/SiGe MODFETs used in this study were grown by MBE on a thick relaxed SiGe virtual substrate grown by low-energy PECVD on plain Si wafers.