Morphology Evolution of Epitaxial SiGe in Patterns

In these experiments 19 nm of Si
_0.73
Ge
_0.27
(SiGe) have been deposited by CVD on patterned (001) Si wafers. The patterns are oriented either along <;100>; or along <;110>; directions in order to obtain information on anisotropic effects.The epitaxial SiGe has been annealed one minute under H
₂
atmosphere at 750°C, and the morphology has been characterized mainly by SEM, TEM and AFM.