(NH4)2S Passivation for High Mobility Germanium-Tin (GeSn) p-MOSFETs

In this work, we report high mobility Ge0.958Sn0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge0.958Sn0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/V·s and a subthreshold swing S of 220 mV/decade.