Effects of nonequilibrium velocity-field characteristics on the performance of GaAs and InP field-effect transistors

Monte Carlo calculations of nonequilibrium electron transport in InP and GaAs short channel field-effect transistors have been performed. The influence upon transistor performance of such transient effects as velocity overshoot is discussed for each material and is compared with the influence of the respective equilibrium velocity-field curves. A two-dimensional method for computing the properties of InP FETs is also discussed. Ranges of channel lengths for which each material can be expected to be superior are discussed.