A high efficiency CW transferred-electron oscillator with optimized doping profile

This study is aimed at helping to design X-band C.W. transferred electron oscillators with higher performance. It is shown by calculations that the efficiency in C.W. operation is drastically improved by quantitatively controlling the doping profile to account for the temperature profile, and further governed by carrier concentration times layer thickness (nxℓ) product and diode size. Relations among nxℓ product, diode size, and doping gradient are defined. The calculations are substantiated by experiments.