Characteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses

We developed three-dimensional stacked complementary TFT devices using n-type amorphous In-Ga-Zn-O and p-type poly-(9, 9-dioctylfluorene-co-bithiophene) TFTs. In this presentation, we will report the characteristic shift of the CTFT inverter after temperature and operation stresses. The characteristic shifts extremely negatively after temperature stress. This is caused by the characteristic degradation of the F8T2 TFT. On the other hand, the characteristic shifts gradually positively after operation stress. This is caused by the characteristic degradation of the a-IGZO TFT.