Analysis of electron transport in AlGaN based on empirical pseudopotential method

This paper describes calculation of band structures in AlGaN based on an empirical pseudopotential method. The pseudopotential parameters were adjusted so that the Al composition dependent bandgap energy exhibited reasonable agreements with the experimental data. The full-band model of AlGaN was applied to the electron transport calculation in AlGaN/GaN structures. Current-voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were calculated based on a full-band Monte Carlo algorithm.