Analysis of Complementary RRAM Switching

A novel procedure to decompose the I- V switching curves of complementary resistive switching (CRS) RRAM cells into the intrinsic switching characteristics of its individual constituting elements is proposed based on the set behavior of HfO
₂
-based bipolar RRAM elements. Analysis of different types of complementary cells indicates that very similar intrinsic switching behaviors occur in strongly different types of bipolar switching RRAM, however with a strong material dependence of the characteristic switching voltage.