A computationally efficient ion implantation damage model and its application to multiple implant simulations

A computationally efficient ion implantation damage model based on the Kinchin-Pease formula has been developed and implemented into UT-MARLOWE Version 4.0. A speed improvement of up to an order of magnitude over previous damage models has been achieved with an accuracy equal to or better than that of the previous version of UT-MARLOWE. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.