Modeling reverse short channel and narrow width effects in small size MOSFET's for circuit simulation

Modeling of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes are presented. The results show that the model can describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12 /spl mu/m regime.