Bipolar-Switching Model of RRAM by Field- and Temperature-Activated Ion Migration

The resistive switching memory (RRAM) may offer a scalable solution for 3D high-density non-volatile storage. For physics-based prediction of RRAM scalability, however, accurate switching models must be developed. This work presents a numerical model for bipolar switching, capable of describing set/reset processes and reliability issues, such as program/read disturbs and retention. The numerical model is based on field- and temperature-activated ion migration and accounts for set/reset characteristics for different compliance currents and timescales (10 ns - 100 s) for HfO
_x
RRAM.