Multilayer Graphene as Charge Storage Layer in Floating Gate Flash Memory

Charge storage capability of multilayer graphene (MLG) in floating gate flash memory structure is demonstrated. MLG sheets are considered for this purpose because of the higher work function and higher density of states compared to single layer graphene (SLG) and lower conductivity along c-axis. A memory window of 6.8V for 1 second programming is obtained at ±18V program/erase voltage. Number of electrons stored in MLG sheets after 18V programming voltage is calculated as 9.1 x 1012 cm-2 which is higher than the density of states in SLG, suggesting the suitability of MLG for multi level data storage flash memory devices.