Performances of the Negative Tone Resist AZnLOF 2020 for Nanotechnology Applications

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is improved to the detriment of another. Resist properties have been investigated to form small features and high-aspect ratio lines. It has been demonstrated that thickness, postbaking time, development time, and dose effects can be varied and adjusted to form smallest patterns reproducible. Various writing strategies making use of test patterns comprising different nominal feature size were also studied. Additionally, high resolution and dense pattern fabrication with high-aspect ratios are demonstrated. Fifty-nanometer-wide lines spaced out at 100-nm intervals were achieved in a 200-nm-thick resist, and high-aspect ratio 200-nm-wide lines spaced out at 400-nm intervals were realized in a 1-μm-thick resist.