Investigation of Schottky junction and MOS technology for III–V compound semiconductor MOSFET application

This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for source/drain (S/D) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAlO
₃
(LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5×10
^-3
A/cm
²
for 500°C RTA treated samples at V
_fb
-1V were achieved.