Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Residual damage in `low-dose' implanted and `high-temperature' annealed Si have not been studied well due to lack of characterization technique and awareness of its risk for device degradation. In this study, we detected and characterized residual damage, which is existed in low-dose (10
¹³
cm
^-2
) As implanted Si after high-temperature (1100°C) RTA in N
₂
and O
₂
mixed atmosphere. The characterization techniques we selected were CL and PAS methods. It was succeeded to reveal the existence of residual damage and identify its damage as a kind of vacancy-type of defects. Moreover, it was clear that residual damage was transformed to be the other type of defect by combined with oxygen. The details of defects and their variation during annealing will be discussed in this paper.