Comparison of BF2, In, Ga, C+Ga & In+BF2 Dopant for 22nm node bulk & PD-SOI HALO implantation or ground plane back-gate doping for FD-SOI CMOS technologies

We compared BF2, In, Ga, C+Ga and In+BF2 dopant species for nMOS HALO at 22nm node for planar bulk & PD-SOI or for FD-SOI ground plane back-gate doping which require steep retrograde dopant profile and good dopant activation using a 1200°C Flash + 900°C 10 sec RTA anneal sequence. The best results were with the C+Ga co-implant realizing a steep surface dopant profile and dopant activation in the 2–3E18/cm³ level. In dopant activation was limited to 3–7E13/cm³ due to low solid solubility limit from the 900°C RTA anneal. The BF2, In+BF2 and Ga implant conditions all showed flat to increasing dopant profile pile-up at the surface which is not desirable.