Suppressed soft-errors and highly reduced current for HfOX based unipolar RRAM by inserting AlOX layer

Compared with the Ni/HfO
_X
device, the Ni/AlO
_X
/HfO
_X
unipolar device exhibits a higher R
_HIGH
and the robust endurance of 10k cycles without any soft-errors. A possible mechanism with filament model is proposed to describe these results. The high operation speed of 40 ns, low operation current possibly down to 10 μA, and stable nonvolatile characteristic at 85 °C in the Ni/AlO
_X
/HfO
_X
device are demonstrated to realize the device to be the next generation nonvolatile memory.