Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT

Electron concentration profiles are simulated for the double-gate (DG) InAlAs/InGaAs/InP HEMT for nanometer gate dimension with two separate gate controls on either side of the double heterostructure. A Quantum Moments model has been used to account for the quantization effects in the device. The quantum simulation of the confinement of the charge carriers in the nano-dimensional channel formed between the two hetero structures reveals a single peak for electron concentration in the channel with enhanced gate control. Moreover, simulated quantum results obtained for ID-VDS are verified by comparing them with the experimental 100nm Double-gate InAlAs/InGaAs/InP HEMT and are in good agreement.