Realization of both a single electron transistor and a field effect transistor with an underlapped FDSOI MOSFET geometry

A dual mode device has been realized with FDSOI MOSFET technology implementing both a single electron transistor (SET) and a field effect transistor (FET). The silicon substrate is used as a back gate to choose between these two functionalities. We show in this paper that the behavior of the device is determined by the position of the electron gas in the silicon mesa: the device is a SET if the electron gas is created by the top gate, and behaves as a FET when the back gate induces a electron gas at the bottom of the silicon mesa. This opens the possibility to design hybrid circuits exploiting both advantages of FETs and SETs.