Self-heating parameter extraction of power MOSFETs based on transient drain current measurements and on the 2-cell self-heating model

Self-heating parameter extraction for circuit simulation model is discussed based on the transient drain current measurement, by using a 18V power MOSFET as a test device. The fitting errors in the conventional one-cell self-heating model have been investigated and the influences of the spread resistance on the transient current are discussed to refine the modeling strategy. A simple two-cell model is also proposed and its excellent fitting capability for wide time ranges is demonstrated.