Determination of the ion erosion rate during the SIMS analysis on AlxGa1−xAs as a function of x using HRXRD

An irregular erosion rate in SIMS can lead to erroneous results during depth profiling analysis of semiconductor hetero-structures. In this work the dependence of erosion on the composition of Al
_x
GA
_1-x
As is determined. High resolution X-ray diffraction is used to measure the alloy composition considering the deformation due to a good coupling between substrate and layer. The result shows that the erosion rate is reduced to 70% when the AlAs fraction (x) increases from 0 to 0.65.