Silicon vs. germanium junctionless double-gate field effect transistor

In this paper, performance of 20-nm germanium symmetric double-gate junctionless transistor (DGJLT) is evaluated and compared with silicon DGJLT. The performance parameters, namely drain current (I_d), threshold voltage (V_t) drain induceed barrier lowering (DIBL), subthreshold slope (SS), transconductance/drain current ratio (G_m/I_d) and drain output conductance (G_D) are systematically investigated for n-type DGJLT with the help of extensive device simulations for silicon and germanium substrate material. Germanium DGJLT is found to have significantly overall better performance as compared to silicon DGJLT for digital and analog applications.