Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I
_sc
is 13.512 mA/cm
²
, the open-circuit voltage (V
_oc
) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the I
_sc
and the efficiency were 13.68 % and 12.24 %.