Improvement of microcrystalline silicon N-I-P solar cell by hydrogen plasma treatment for n/i interface

The performance of a nip microcrystalline silicon (μc-Si) solar cell was improved by “alternately deposition and hydrogen plasma treatment method (ADHT)” at n/i interface. The defect densities measured by static capacitance-voltage (C-V) was decreased from 2.37×10
¹⁶
cm
^-3
to 1.25 ×10
¹⁶
cm
^-3
. The short-circuit current Jsc was improved from 14.5 mA/cm
²
to 17.2 mA/cm
²
on bared stainless steel substrate and Obtained 24.7 mA/cm
²
on a.BR substrates.