Loading [MathJax]/extensions/MathMenu.js
GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure | IEEE Journals & Magazine | IEEE Xplore

GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure


Abstract:

To enhance the internal quantum efficiency of GaInAsP/InP lateral current injection (LCI) lasers, we adopted a structure consisting of five uniformly distributed quantum-...Show More

Abstract:

To enhance the internal quantum efficiency of GaInAsP/InP lateral current injection (LCI) lasers, we adopted a structure consisting of five uniformly distributed quantum-wells (QWs). A differential quantum efficiency of 59% and an internal quantum efficiency of 70% were obtained for a cavity length of 750 μm, the latter value is almost twice that of an LCI-Fabry-Pérot laser with a conventional QW structure.
Published in: IEEE Photonics Technology Letters ( Volume: 24, Issue: 11, June 2012)
Page(s): 888 - 890
Date of Publication: 05 April 2012

ISSN Information:


Contact IEEE to Subscribe

References

References is not available for this document.