Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors

We evaluated the effects of low-energy ultraviolet (UV) and visible light in organic thin-film-transistors, with an hexamethyldisilazane-treated
$\hbox{SiO}_{2}$
gate dielectric. After visible-light irradiation, the devices showed temporary variation in the threshold voltage, drain current, and transconductance. When UV irradiation is performed, the devices exhibit significant and permanent degradation, with a transconductance drop up to
$-$
18%.