A high voltage, high speed polysilicon emitter bipolar transistor

A high voltage polysilicon emitter bipolar transistor has been developed. The transistor exhibits a /spl beta/ - early voltage product of 12,000 and BVcbo, BVceo values of 60 and 30 volts, respectively and a cut-off frequency of 5.5 GHz. The design and fabrication of this transistor is described. A comparison of this device with other high voltage analog BJTs is made. It is shown that the use of bipolar scaling techniques on the design of high voltage BJTs results in very high performance analog devices.