Radial bulk-mode vibrations in a gate-all-around silicon nanowire transistor

This paper reports the radial bulk-mode vibrations in a gate-all-around (GAA) silicon nanowire (SiNW) transistor at 25.3GHz, with a quality factor of ~850 measured in air. The radial bulk-mode resonance is excited capacitively in the SiNW using the surrounding gate and gate dielectric as the transducer; the output is sensed piezoresistively by modulating the drain current in SiNW. The SiNWs are defined using standard lithography in a top-down front-end CMOS process, which allows for resonators with different frequencies to be fabricated on the same chip.