High Temperature Stable Operation of 1.3-$\mu$m Quantum-Dot Laser Integrated With Single-Mode Tapered Si $_{3}$N $_{4}$ Waveguide

A photonic-integrated circuit consisting of a 1.3-μm quantum-dot laser and Si
₃
N
₄
single-mode tapered waveguide, suitable for high temperature operation, is demonstrated. The laser active region incorporates p-doping, tunnel injection, and a superlattice barrier. The temperature dependence of the threshold current of the discrete laser is characterized by T
₀
~ ∞ in the temperature range 5
^°
C ≤ T ≤ 60
^°
C and 90 K in the range 60
^°
C <; T ≤ 85
^°
C. The Si
₃
N
₄
tapered waveguide is monolithically integrated with a 2.1-μm coupling groove. The insertion loss of a 160-μm waveguide in the integrated circuit is 2.47 dB.