The study of delta-doping concentration effect on a novel quantum-well HEMT structure

In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5/spl times/10/sup 12/ cm/sup -2/ and 10/sup 13/ cm/sup -2/ are proposed.