Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential
$({\psi}_{s})$
on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge
$(N_{ot})$
and the interface trap
$(N_{it})$
areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of
${\psi}_{s}$
. The approach is verified experimentally through comparisons with capacitance vs. voltage (
$C$
-
$V$
) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.