Temperature effect on I-V characteristics of Si nanowire transistor

This paper represents the temperature effect on silicon nanowire transistor and the possibility of using it as a temperature nanosensor. MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistors. Current-voltage characteristics with different values of temperature were simulated. Variation of sub threshold slope (SS), ON current to OFF current ratio (Ion/Ioff) and drain induced barrier lowering (DBIL) with working temperature was investigated. MOS diode connection suggested using the silicon nanowire transistor as a temperature nanosensor.