Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy

Detailed comparison of electron holography and scanning capacitance microscopy techniques for the 2D dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.