GaAs p-i-n diodes for room temperature soft X-ray photon counting

A study of leakage currents and X-ray photon counting using GaAs p-i-n diodes is presented. Different fabrication techniques have been investigated, namely He implantation, partial wet etching and full wet etching. It was found that the partially etched diodes showed well-defined spectral peaks when exposed to a
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Fe radioisotope source and uniformly low leakage currents ideal for X-ray detector arrays.