InGaN-based multi-quantum well blue-violet light emitting diode

III-nitride semiconductors are well known as a promising material for solid-state lighting such as light emitting diode (LED). GaN-based LED offers energy saving, durability and high efficiency [1–3]. This paper reports on the InGaN-based multi quantum well (MQW) blue-violet LED grown by metal organic chemical vapor deposition (MOCVD). The LED structure was grown on Si (111) substrate with AlN buffer layer, followed by 40 pairs of AlN/GaN intermediate layer with respective thickness of 5 nm and 20 nm. Subsequently, a 600 nm thick AlGaN/GaN strained-layer superlattices (SLSs) cladding underlayer was grown which consist of 120 pairs SLSs. Then, 60 nm GaN waveguide, 2.0 nm InGaN MQW active layer, 30 nm InGaN over layer and 10 nm GaN were deposited subsequently.