Fast pulse analysis of TiO2 based RRAM nano-crossbar devices

Switchable metal-insulator-metal (MIM) structures are the key elements for future non-volatile resistive RAM (RRAM) devices. Recently this type of memory device has attracted considerable interest due to the prospect of non-volatile data storage combined with low power consumption, excellent scalability and very fast write/read operation. However the physical processes responsible for the fast resistive switching are still under investigation. In this work we will present the replacement of the time consuming quasi-static current driven electroforming process by short voltage pulse induced electroforming. Furthermore resistive switching was measured with voltage pulses down to 5 ns pulse width with an in-situ recording of the current response. The high-frequency measurements provide a deeper insight into the physical background of fast data operation.