A novel Dual-Control-Gate Floating Gate Transistor used in VCO application

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This block is intended to provide a new vision of design and develop new functionalities. This device is developed to be fully compliant with Non Volatile Memory (NVM) process [1]. DCG-FGT device has been successfully implemented on a 0.13μm embedded NVM CMOS technology. The DCG-FGT is shown in Fig. 1. A first layer of poly-silicon forms the floating gate above the bulk while a second poly-silicon layer is used to implement two adjacent control gates namely (G1) and (G2).