InGaN/GaN microwave varactors with high Q, high-breakdown voltage and high linearity

InGaN-GaN Schottky-diode microwave varactors with Q >; 100 at 1 GHz, breakdown voltage >; 120 V, and OIP3 >; 71 dBm are reported. The combination of Q, voltage handling capability, and OIP3 represents advancement from any other reported varactors, and is important for applications in adaptive and tunable base-station radio front-ends.