2D analytical DC model for nanoscale Schottky barrier DG-MOSFETs

In this paper, we present a current model for lightly doped Schottky barrier Double-Gate MOSFETs based on the 2D conformal mapping technique [1] for the electrostatics [2], [3]. The ambipolar behavior is predicted by the superposition of the separately estimated electron and hole currents. Our model includes essential 2D effects combined with diffusion effects and shows accurate I-V curves for channel lengths down to 22 nm.