Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node

New approaches to achieve further improvement of the specific contact resistivity, ρ
_c
, by lowering the Schottky barrier height and/or enhancing the active dopant concentration using novel interface dipole engineering and in-situ doping techniques are investigated. Low ρ
_c
on the order of sub-10
^-9
Ω-cm
²
is successfully demonstrated, and various interface dipole materials are screened and implemented in scaled FinFETs for contact resistance reduction, which leads to substantial improvements in drive current performance.